BSM180C12P2E202
Rohm Semiconductor
English
Part Number: | BSM180C12P2E202 |
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Manufacturer/Brand: | LAPIS Technology |
Part of Description: | SICFET N-CH 1200V 204A MODULE |
Datasheets: | None |
RoHs Status: | ROHS3 Compliant |
ECAD Model: | |
Payment: | PayPal / Credit Card / T/T |
Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
Share: |
Ship From: Hong Kong
Quantity | Unit Price |
---|---|
1+ | $720.00 |
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Product Attribute | Attribute Value |
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Vgs(th) (Max) @ Id | 4V @ 35.2mA |
Vgs (Max) | +22V, -6V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | Module |
Series | - |
Rds On (Max) @ Id, Vgs | - |
Power Dissipation (Max) | 1360W (Tc) |
Package / Case | Module |
Package | Tray |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | 175°C (TJ) |
Mounting Type | Chassis Mount |
Input Capacitance (Ciss) (Max) @ Vds | 20000 pF @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
Base Product Number | BSM180 |
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![]() BSM180C12P2E202Rohm Semiconductor |
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